Top-down fabrication of GaN nano-laser arrays by displacement Talbot lithography and selective area sublimation
نویسندگان
چکیده
منابع مشابه
Fabrication and Optical Characterization of Silicon Nanostructure Arrays by Laser Interference Lithography and Metal-Assisted Chemical Etching
In this paper metal-assisted chemical etching has been applied to pattern porous silicon regions and silicon nanohole arrays in submicron period simply by using positive photoresist as a mask layer. In order to define silicon nanostructures, Metal-assisted chemical etching (MaCE) was carried out with silver catalyst. Provided solution (or materiel) in combination with laser interference lithogr...
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متن کاملfabrication and optical characterization of silicon nanostructure arrays by laser interference lithography and metal-assisted chemical etching
in this paper metal-assisted chemical etching has been applied to pattern porous silicon regions and silicon nanohole arrays in submicron period simply by using positive photoresist as a mask layer. in order to define silicon nanostructures, metal-assisted chemical etching (mace) was carried out with silver catalyst. provided solution (or materiel) in combination with laser interference lithogr...
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Article history: Received 29 March 2016 Received in revised form 7 June 2016 Accepted 20 June 2016 Available online 21 June 2016 In this work we demonstrate a fabrication process for three-dimensional (3D) container, which is composed of inverted pyramidal pit (IPP) and a capwith nanosized opening fabricated by combining laser interference lithography and anisotropic wet etching processes. The ...
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We describe the fabrication of large areas (4 cm(2)) of metallic structures or aperture elements that have ~100-350-nm linewidths and act as frequency-selective surfaces. These structures are fabricated with a type of soft lithography-near-field contact-mode photolithography-that uses a thin elastomeric mask having topography on its surface and is in conformal contact with a layer of photoresis...
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ژورنال
عنوان ژورنال: Applied Physics Express
سال: 2019
ISSN: 1882-0778,1882-0786
DOI: 10.7567/1882-0786/ab0d32